2009 · 61 citations · 4 references
EngineeringCommunicationElectrical EngineeringMicroelectronicsMicrowave EngineeringWireless CommunicationsCmos Circuit DesignCommunication SystemsHigh-frequency Semiconductor DevicesMicrowave Integrated CircuitsMillimeter-wave CommunicationsRadio-frequency Integrated CircuitsBicmos TechnologyFrequency ModulationMillimeter-wave Integrated CircuitsNoise FigureRadio Frequency TransceiversSige Bicmos DesignTransceiver DesignWireless Data Transmission
This paper describes the first demonstration of Doppler detection and data transmission at 140 GHz and 4 Gb/s through the air using a single-chip silicon transceiver at 140 GHz. The transceiver, which consists of a 140-GHz push-push VCO with a static divide-by-64 chain, a 140-GHz amplitude modulator, a 140-GHz LO amplifier, a fundamental frequency mixer, a 140-GHz LNA, and a variable gain IF amplifier, has a downconversion gain of 30 dB and a noise figure of 12.3 dB. It is fabricated in a 130-nm SiGe BiCMOS technology, occupies an area of 1.44 mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> , and consumes 1.5 W.
4
Range correlation effects in radars
M.C. Budge, M.P. Burt · 2002 · 139 citations
Engineering, Electrical Engineering, Stochastic Modeling +11
165-GHz Transceiver in SiGe Technology
E. Laskin, P. Chevalier, A. Chantre et al. · IEEE Journal of Solid-State Circuits · 2008 · 100 citations