Photoinduced sign change of the magnetoresistance in field-effect transistors based on a bipolar molecular glass

Abstract

The application of a novel bipolar molecular glass in field-effect transistors leads to devices with photoinduced magnetoresistance (MR) sign change. In darkness a low external magnetic field increases the resistance (positive MR up to +0.1%), while a magnetic-field induced resistance decrease (negative MR up to -6.5%) can be achieved under illumination.