Multiband Mobility in Semiconducting Carbon Nanotubes

Abstract

We present new data and a compact mobility model for semiconducting single-wall carbon nanotubes, with only two adjustable parameters, the elastic and inelastic collision mean free paths at 300 K. The mobility increases with diameter, decreases with temperature, and has a more complex dependence on charge density. The model and data suggest that the room temperature mobility does not exceed 10 000 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> /Vmiddots at high carrier density (n > 0.5 nm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-1</sup> ) for typical single-wall nanotube diameters, due to the strong scattering effect of the second subband.