Evaluation of p-stop structures in the n-side of n-on-n silicon strip detector

Abstract

Large area (63.6 mm/spl times/64 mm) n-on-n silicon strip detectors have been fabricated, implementing various p-stop structures in the n-side. The detectors were characterized in laboratory and in beam tests. The beam tests showed that the individual p-stop structure collected less charge in the region between the strips than other p-stop structures.