IEEE Transactions on Electron Devices · 1972 · 141 citations · 14 references
EngineeringElectrical EngineeringMicroelectronicsOptoelectronicsSemiconductor DevicesDetector TechnologyNoise In Electronic DevicesNoise In Semiconductor DevicesOptical Properties Of SemiconductorsPhotodetectorsSemiconductor DetectorsAvalanche GainAvalanche MultiplicationAvalanche PhotodiodesElectron IonizationGainNoise Spectral DensityPhotodiodesSilicon Photodiodes
Experimental measurements of the gain distribution and noise spectral density of silicon avalanche photodiodes are presented and compared with McIntyre's theories [7], [8]. Excellent agreement is obtained using k <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">eff</inf> , the effective ratio of the hole and electron ionization coefficients, as the only adjustable parameter.
14
Ionization Rates of Holes and Electrons in Silicon
C. A. Lee, R. A. Logan, R. L. Batdorf et al. · Physical Review · 1964 · 475 citations