Blue Electroluminescent SrGa₂S₄:Ce Thin Films Grown by Molecular Beam Epitaxy

Abstract

SrGa 2 S 4 :Ce thin films have been grown by molecular beam epitaxy, using the source materials of Sr metal and Ga 2 S 3 . Polycrystalline films are obtained at a growth temperature of 560° C without annealing and their chemical composition ratio of Sr:Ga:S is 1:1.94:3.94. The SrGa 2 S 4 :Ce films show pure blue photoluminescence and electroluminescence with the CIE color coordinates of x =0.14 and y =0.13.