Design and Analysis of Sub-10 nm Junctionless Fin-Shaped Field-Effect Transistors

Abstract

We design and analyze the n-channel junctionless fin-shaped field-effect transistor (JL FinFET) with 10-nm gate length and compare its performances with those of the conventional bulktype fin-shaped FET (conventional bulk FinFET). A three-dimensional (3-D) device simulations were performed to optimize the device design parameters including the width (Wfin) and height (Hfin) of the fin as well as the channel doping concentration (Nch). Based on the design optimization, the two devices were compared in terms of direct-current (DC) and radio-frequency (RF) characteristics. The results reveal that the JL FinFET has better subthreshold swing, and more effectively suppresses short-channel effects (SCEs) than the conventional bulk FinFET.