RF measurement technique for characterizing thin dielectric films

Abstract

We have developed a novel technique for measuring the dielectric constant and loss tangent of a thin film dielectric material up to 5 GHz. The dielectric film needs to be deposited on a metal layer and capped with a metal electrode layer. The bottom metal layer does not have to be very conductive, as long as its sheet resistance is uniform and known. Only one step lithography on the top metal layer is required. No dc electrical contact to the bottom metal layer is necessary. The measurement is taken with a Vector Network Analyzer and a coplanar-wave-guide miniature wafer probe.