IEEE Microwave and Wireless Components Letters · 2004 · 106 citations · 8 references
EngineeringElectrical EngineeringMicroelectronicsOptoelectronicsSemiconductor DevicesHigh-frequency Semiconductor DevicesMicrowave AmplifiersMicrowave Integrated CircuitsMicrowave OscillatorsMicrowave Semiconductor DevicesRadio-frequency Integrated CircuitsFrequency MultipliersGaas OscillatorsPower Amplifier DesignPower InputPower OutputTerahertz OscillatorsTerahertz Semiconductor DevicesTerahertz Sources
We report on the design and performance of a ×2×3×3 frequency multiplier chain to the 1.7-1.9 THz band. GaAs-based planar Schottky diodes are utilized in each stage. A W-band power amplifier, driven by a commercially available synthesizer, was used to pump the chain with 100 mW of input power. The peak measured output power at room temperature is 3 μW at 1740 GHz. When cooled to 120 K, the chain provides more than 1.5 μW from 1730 to 1875 GHz and produced a peak of 15 μW at 1746 GHz.
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Fabrication of 200 to 2700 GHz multiplier devices using GaAs and metal membranes
Suzanne Martin, B. Nakamura, A. Fung et al. · 2002 · 104 citations