High-Temperature Leakage Improvement in Metal–Insulator–Metal Capacitors by Work–Function Tuning

K.C. Chiang, C. H. Cheng, Han Pan, C. N. Hsiao, C. P. Chou, Albert Chin, H. L. Hwang

IEEE Electron Device Letters · 2007 · 52 citations · 13 references

Concepts

Abstract

Using low-cost and high work-function Ni, a low leakage current of 5times10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-6</sup> A/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> at 125 degC is obtained in a high 25-fF/mum <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> -density SrTiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> metal-insulator-metal (MIM) capacitor processed at 400 degC. This is approximately two orders of magnitude better than the same device using a TaN electrode, with added advantages of improved voltage and temperature coefficients of capacitance. This work-function tuning method also has merit for achieving both low thermal leakage and high overall kappa value beyond previous laminate structure

References

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