35-GHz static and 48-GHz dynamic frequency divider ICs using 0.2-/spl mu/m AlGaAs/GaAs-HEMTs

Abstract

Two static and two dynamic frequency dividers based on enhancement and depletion 0.2-/spl mu/m gate length AlGaAs/GaAs-high electron mobility transistor (HEMT) (f/sub T/=60 and 55 GHz) technology were designed and fabricated. High-speed operations up to 35 GHz for the static frequency dividers and 48 GHz for the dynamic dividers, respectively, have been achieved. The single-ended input and differential outputs to ground simplify many applications. The power consumption is 250 mW for the divide-by-two dividers and 350 mW for the divide-by-four dividers using two supply voltages of 4 and -2.5 V.