IEEE Journal of Solid-State Circuits · 1997 · 24 citations · 7 references
EngineeringElectrical EngineeringMicroelectronicsMicrowave EngineeringSemiconductor DevicesHigh-frequency Semiconductor DevicesIntegrated Circuit DesignMicrowave Integrated CircuitsMicrowave Semiconductor DevicesPower DividersRadio-frequency Integrated CircuitsDividersGaas Microwave Integrated CircuitsGaas Monolithic Microwave Integrated CircuitsHigh-electron-mobility TransistorsMillimeter-wave Integrated CircuitsMonolithic Microwave Integrated Circuit Power DividersPower ConsumptionRadio-frequency Integrated Circuit Design
Two static and two dynamic frequency dividers based on enhancement and depletion 0.2-/spl mu/m gate length AlGaAs/GaAs-high electron mobility transistor (HEMT) (f/sub T/=60 and 55 GHz) technology were designed and fabricated. High-speed operations up to 35 GHz for the static frequency dividers and 48 GHz for the dynamic dividers, respectively, have been achieved. The single-ended input and differential outputs to ground simplify many applications. The power consumption is 250 mW for the divide-by-two dividers and 350 mW for the divide-by-four dividers using two supply voltages of 4 and -2.5 V.
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39.5-GHz static frequency divider implemented in AlInAs/GaInAs HBT technology
J.F. Jensen, M. Hafizi, W.E. Stanchina et al. · 2003 · 56 citations
Taiichi Otsuji, M. Yoneyama, Koichi Murata et al. · IEEE Journal of Solid-State Circuits · 1997 · 49 citations · Full text
Engineering, Computer Engineering, Electrical Engineering +16
Koichi Murata, Taiichi Otsuji, Eiichi Sano et al. · IEEE Journal of Solid-State Circuits · 1995 · 48 citations
Engineering, Computer Engineering, Electrical Engineering +16