3D FDTD analysis of a SOT353 package containing a bipolar wideband cascode transistor using the compression approach

Abstract

A 3d electromagnetic simulation of an entire mold injected plastic package including its coplanar environment is presented. The active elements are substituted by inner ports. The resulting network is connected with measured transistor data using a circuit simulator. A comparison of the simulated data with measured results is shown. The influence of the package and therefore the meaning of such a simulation procedure is discussed.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>