IEEE Journal of the Electron Devices Society · 2014 · 53 citations · 20 references
EngineeringElectrical EngineeringMaterials ScienceMicrowave EngineeringSemiconductor DevicesSemiconductor MaterialsHigh-frequency Semiconductor DevicesMicrowave Semiconductor DevicesSemiconductor Device MaterialsWide Band Gap SemiconductorsWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsBreakdown CharacteristicsGallium Nitride (Gan) MaterialsGallium Nitride Microwave Integrated CircuitsGan-based High-frequency DevicesMicrowave DevicesMicrowave RectifiersSchottky Barrier DiodesSemiconductor Materials For Microwave Devices
GaN Schottky barrier diodes (SBDs) with low turn-on voltage are developed for microwave rectification. The diodes with reactively-sputtered TiN electrodes have a lower turn-on voltage compared with the diodes with Ni electrode, while the on-resistance, the reverse leakage current, and the reverse breakdown characteristics are comparable to each other. Theoretically, the SBDs with TiN electrodes can enhance the efficiency of a rectenna circuit at 2.45 GHz from 84% to 89% when the turn-on voltage decreases from 1.0 to 0.5 V.
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