Characterization of Vapor‐Deposited Tin‐Doped Indium Oxide Films

Abstract

Polycrystalline tin‐doped indium oxide films were vapor deposited on yttria‐stabilized zirconia substrates by an electrochemical technique. Film growth conditions were dictated by the sublimation reactions of the oxides of tin and indium. Growth was monitored by cell current and correlated with final film thickness. The composition was measured spectroscopically and correlated with electronic measurements on the films. The resultant morphologies of the films are discussed in terms of the mechanism of the growth process. The marked preferred crystallographic orientation observed in all films is rationalized on the basis of this growth model.