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Stress and microstructure in tungsten sputtered thin films
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1989
Year
Materials ScienceHigh Temperature MaterialsEngineeringCrystalline DefectsSurface ScienceApplied PhysicsTungsten FilmsArgon PressureThin Film Process TechnologyThin FilmsFilm StressesEpitaxial GrowthChemical Vapor DepositionThin Film ProcessingMicrostructure
Tungsten films, 0.05–1 μm thick, were deposited on silicon wafers by rf magnetron sputtering. Induced film stresses were investigated as a function of substrate temperature and background pressure in connection with microstructural observations and limited compositional analysis. Homologous substrate temperatures Ts/Tm, where Tm is the melting point of tungsten (3683 K), ranged from 0.08 to 0.15. Argon pressures investigated ranged from 1 to 7 Pa. This corresponds to the low-temperature part of Thornton’s microstructure model, within zones I and T. Two regions were distinguished for increasing values of the homologous temperature and/or decreasing values of argon pressure: (i) The first region, observed for low substrate temperature and high argon pressure, was a voided zone I microstructure with small grain size (200–400 Å). Film stresses increased from zero towards tensile values as voids disappeared. (ii) The second region, observed for higher values of Ts/Tm and/or low pAr, was a denser zone T structure, with a bimodal grain distribution (<3000 Å). After reaching a maximum tensile value σ=2×103 MPa, corresponding to the transition from zone I to zone T microstructure, the stress decreased abruptly to a constant value σ=−2.7×103 MPa. All stress values were found to be quite independent of thickness in the range from 0.05 to 1 μm. Even though β metastable phase is usually observed for zone I deposits, a quasipure α film was obtained at low temperature and high pressure (within zone I) under especially clean conditions. Independent of phase composition (α or β phase) the voided zone I was observed to be highly reactive in air. The shift with time toward compressive stress for the zone I structure was attributed to oxygen absorption in the pores. For 3-month-old films, a high oxygen content of ∼20% was measured by nuclear reaction analysis. In the denser zone T films without voids, no change in film stresses was observed over time, and oxygen content was negligible (<1%) after 3 months.