Low-power 1/2 frequency dividers using 0.1- mu m CMOS circuits built with ultrathin SIMOX substrates

Abstract

Four types of frequency dividers were fabricated on SIMOX/SOI (separation by implanted oxygen/silicon on insulator) substrates. A novel circuit among these four circuits showed the highest operation frequency of 1.2 GHz under 1-V supply voltage, with gate lengths of 0.15 and 0.1 mu m. Power consumption was no more than 50 and 62 mu W for both 0.15- and 0.1- mu m gate designs, respectively.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>