Publication | Closed Access
Effect of growth pressure on coalescence thickness and crystal quality of GaN deposited on 4H–SiC
10
Citations
10
References
2010
Year
Materials EngineeringMaterials ScienceWide-bandgap SemiconductorEngineeringApplied PhysicsGrowth PressureGan Power DeviceCrystal QualityCarbideCoalescence ThicknessMicrostructure
| Year | Citations | |
|---|---|---|
Page 1
Page 1