Breakdown voltage improvement for thin-film SOI power MOSFET's by a buried oxide step structure

Abstract

Numerical simulations are performed to demonstrate that a new SOI power MOSFET structure, namely buried oxide step structure (BOSS), introduces a high electric field peak near the buried oxide step and that this peak reduces the height of the other electric field peaks within thin silicon layer. The relaxation of these peaks results in higher breakdown voltages at much higher impurity concentrations than those in the conventional structure.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>