Ion bombardment induced surface topography modification of clean and contaminated single crystal Cu and Si

Abstract

Abstract Among the several factors which lead to depth resolution deterioration during sputter profiling, surface morphological modification resulting from local differences of sputtering rate can be important. This paper reports the results of direct scanning, electron microscopic studies obtained quasi‐dynamically during increasing fluence ion bombardment of the evolution of etch pit structures on Si and Cu, and how such elaboration may be suppressed. It also reports on the elaboration of contaminant‐induced cone generation for different ion species bombardment. The influence of such etch pit and cone generation on achievable depth resolution is assessed.