Analytical microdosimetry model for proton-induced SEU in modern devices

Abstract

Analytical expressions were derived for the probability of having a secondary ion with a given linear energy transfer value following a p+Si nuclear event. Proton-induced single-event upset cross sections are calculated by integrating this probability with the heavy-ion cross section. The model yields good agreement with the measured cross sections of present device technologies. It is expected to be even better for future submicrometer devices. The approach of the new model is used for other applications like the total ionizing dose of the products of the p+Si reactions.