A quantitative model of the effect of grain size on the resistivity of polycrystalline silicon resistors

Abstract

The effect of grain size on the resistivity of polycrystalline silicon films has been investigated theoretically and experimentally. It is shown that existing models do not accurately predict the resistivity dependence on doping concentration as grain size increases. A new modified trapping theory demonstrates from a good agreement with experimental results that a significant increase in grain size drastically reduces the sensitivity of polysilicon resistivity to doping concentration.