IEEE Transactions on Microwave Theory and Techniques · 2005 · 76 citations · 13 references
EngineeringElectrical EngineeringMicroelectronicsMicrowave EngineeringSemiconductor DevicesHigh-frequency Semiconductor DevicesMicrowave AmplifiersMicrowave Integrated CircuitsMicrowave Semiconductor DevicesPower AmplifiersRadio-frequency Integrated CircuitsClass D AmplifiersGaas Microwave Integrated CircuitsHigh-efficiency Power AmplifiersInductor DesignMicrowave Amplifier DesignPower Amplifier DesignPower OutputRadio Frequency Power Amplifiers
Design considerations are discussed for current-mode class-D (CMCD) microwave power amplifiers. Factors affecting amplifier efficiency are described analytically and via simulation. Amplifiers are reported that incorporate parallel LC resonators alongside the switching transistors. To reduce parasitic resistance, bond-wires were utilized to implement a high Q inductor in the LC resonator. An experimental CMCD amplifier based on GaAs HBTs is reported, with collector efficiency of 78.5% at an output power of 29.5 dBm (0.89 W) at 700 MHz.
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RF power amplifiers for wireless communications
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The class-E/F family of ZVS switching amplifiers
S. Kee, Ichiro Aoki, Ali Hajimiri et al. · IEEE Transactions on Microwave Theory and Techniques · 2003 · 292 citations