Demonstration of a high efficiency nonuniform monolithic gallium-nitride distributed amplifier

Abstract

A monolithic gallium-nitride (GaN) dual-gate HEMT distributed amplifier has been designed which offers increased efficiency by removal of the drain line dummy load. This amplifier uses a dual-gate cascode gain cell to provide higher gain and power with a wideband frequency response. A fabricated four-stage nonuniform distributed amplifier has validated this approach.