Soviet Physics Uspekhi · 1980 · 16 citations · 3 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsSemiconductor MaterialsSurface ScienceSemiconductor PhysicsSemiconductor SurfacesSurface CrystallographySurface PhysicsTwo-dimensional NanomaterialsTwo-dimensional SemiconductorsFermi LevelFermi SurfaceLow-temperature MaterialsShubnikov-de Haas OscillationsSurface OrderTwo-dimensional Electron GasesTwo-dimensional Electron SystemsTwo-dimensional Insulators
A review is given of low-temperature studies of the properties of the two-dimensional electron gas in inversion layers on high-index Si surfaces. The long crystallographic periods associated with such surfaces produce the superlattice effect in the spectrum of the quasi-two-dimensional electron gas. The kinetic coefficients are found to exhibit singularities when the Fermi level and minigaps cross. This was established by measuring the static and the high-frequency conductivities, the Shubnikov-de Haas oscillations, the photoresistivity, the emission of thermal electrons, and the cyclotron resonance in n-type inversion layers near (001) for electron concentrations in the range 1012 – 1014 cm−2. The minigap width varies from 1 to 20 meV, depending on the electron concentration. The position of the minigaps in K-space (but not their size) is in quantitative agreement with theory.
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Valley-Valley Splitting in Inversion Layers on a High-Index Surface of Silicon
L. J. Sham, S. J. Allen, Avid Kamgar et al. · Physical Review Letters · 1978 · 125 citations
Surface Band Structure of Electron Inversion Layers on Vicinal Planes of Si(100)
D. C. Tsui, M. D. Sturge, Avid Kamgar et al. · Physical Review Letters · 1978 · 32 citations