The Microstructure of RuO<inf>2</inf>Thick Film Resistors and the Influence of Glass Particle Size on their Electrical Properties

Abstract

The microstructure and electrical properties of RuO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> thick film resistors have been studied with special emphasis on the effects of material parameters and processing variables such as size of glass frit particles, RuO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> -glass mixing ratio, firing conditions, and so forth. A network of RuO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> develops in a glass matrix on firing, and the increase in the glass particle size enlarged the cell in the network without any significant change in the microstructure. It is shown that a decrease in particle size of glass frit increases the resistance and causes the temperature coefficient of resistor (TCR) to take negative values.