IEEE Transactions on Microwave Theory and Techniques · 1984 · 89 citations · 4 references
EngineeringElectrical EngineeringMicroelectronicsMicrowave EngineeringSemiconductor DevicesHigh-frequency Semiconductor DevicesMicrowave AmplifiersMicrowave Integrated CircuitsMicrowave Semiconductor DevicesMultistage AmplifiersPower AmplifiersAmplificationGaas Monolithic Microwave Integrated CircuitsPower AmplificationPower Amplifier DesignPower Amplifier StagesPower OutputPower Output CapabilityRadio Frequency Power Amplifiers
Power amplification in FET traveling-wave amplifiers is examined, and the mechanisms which limit power capability of the amplifier are identified. Design considerations for power amplification are discussed. A novel single-stage and two-stage monolithic GaAs traveling-wave power amplifier with over 250-mW power output in the 2-20-GHz frequency range is described.
4
Edward L. Ginzton, William R. Hewlett, J. Jasberg et al. · Proceedings of the IRE · 1948 · 386 citations
A MESFET distributed amplifier with 2 GHz bandwidth
W. Jutzi · Proceedings of the IEEE · 1969 · 45 citations
2-20-GHz GaAs Traveling-Wave Amplifier
Y. Ayasli, L.D. Reynolds, J.L. Vorhaus et al. · IEEE Transactions on Microwave Theory and Techniques · 1984 · 28 citations