A MESFET distributed amplifier with 2 GHz bandwidth

Concepts

Hybrid TechniqueElectrical EngineeringEngineeringRadio FrequencyRf SemiconductorHigh-frequency DeviceGhz BandwidthAntennaFlat Frequency ResponseNegligible Phase DistortionsMicroelectronicsMicrowave EngineeringRf SubsystemElectromagnetic Compatibility

Abstract

A lumped distributed amplifier is built in a hybrid technique with microwave Schottky-barrier field-effect transistors and tested. A not yet optimized structure has a flat frequency response up to about 2 GHz and negligible phase distortions; ps-puIses are amplified with negligible overshoot.

References

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Electrical Engineering, Engineering, High-frequency Device +4

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