IEEE Electron Device Letters · 2008 · 21 citations · 7 references
PhotonicsEngineeringPhotodetectorsInfrared SensorOptical PropertiesApplied PhysicsTimes 512Dual-band ImagingInfrared OpticIntegrated CircuitsPhotonic Integrated CircuitQuantum Photonic DeviceMolecular Beam EpitaxyPhotonic DeviceOptoelectronicsThird-generation Thermal Imagers
We report a large-format (640 times 512) voltage- tunable quantum-well (QW) infrared photodetector focal plane array (FPA) for dual-band imaging in the mid- and long-wavelength infrared (MWIR and LWIR) bands. Voltage-tunable spectral response has been achieved through a series connection of eight-well MWIR AlGaAs-InGaAs and 16-well LWIR AlGaAs-GaAs QW stacks grown by molecular beam epitaxy on GaAs substrate. The peak responsivity wavelength of the detectors is shifted from 4.8 to 8.4 mum as the bias is increased within the limit applicable by commercial read-out integrated circuits. The FPA with MWIR and LWIR cutoff wavelengths of 5.1 and 8.9 mum provides noise equivalent temperature differences of 20 and 32 mK (f/1.5) in these bands, respectively. The results are very encouraging for the development of low-cost large-format dual-band MWIR/LWIR FPA technology.
7
Single bump, two-color quantum dot camera
E. Varley, M. Lenz, S. J. Lee et al. · Applied Physics Letters · 2007 · 44 citations
Two-color quantum well infrared photodetector focal plane arrays
Mani Sundaram, Samuel C. Wang, Michael F. Taylor et al. · Infrared Physics & Technology · 2001 · 33 citations