Publication | Open Access
Effects of structural relaxation on calculations of the interface and transport properties of Fe/MgO(001) tunnel junctions
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Citations
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References
2009
Year
EngineeringMagnetic ResonanceTunnel JunctionsSpintronic MaterialMagnetoresistanceMagnetismTunneling MicroscopyTransport PropertiesCharge Carrier TransportRelaxed InterfaceMaterials ScienceElectrical EngineeringPhysicsStructural RelaxationHigh SensitivityOxide ElectronicsSpintronicsFerromagnetismNatural SciencesApplied PhysicsCondensed Matter PhysicsMagnetic PropertyInterface Structure
The relaxation of the interface structure of Fe/MgO(100) magnetic tunnel junctions predicted by density-functional theory depends significantly on the choice of exchange and correlation functional. Bader analysis reveals that structures obtained by relaxing the cell with the local spin-density approximation (LSDA) display a different charge transfer than those relaxed with the generalized gradient approximation (GGA). As a consequence, the electronic transport is found to be extremely sensitive to the interface structure. In particular, the conductance for the LSDA-relaxed geometry is about 1 order of magnitude smaller than that of the GGA-relaxed one. Surprisingly, the effect of the exchange and correlation potential within both the LSDA and the GGA has a little effect on the calculated transmission coefficient when applied to the same Fe/MgO/Fe (001) geometry. The high sensitivity of the electronic current to the details of the relaxed interface might explain the discrepancy between the experimental and calculated values of magnetoresistance.
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