A Quantum-Corrected Monte Carlo Study on Quasi-Ballistic Transport in Nanoscale MOSFETs

Abstract

In this paper, the authors study a quasi-ballistic transport in nanoscale Si-MOSFETs based upon a quantum-corrected Monte Carlo device simulation to explore an ultimate device performance. It was found that, when a channel length becomes shorter than 30 nm, an average electron velocity at the source-end of the channel increases due to ballistic transport effects, and then, it approaches a ballistic limit in a sub-10-nm regime. Furthermore, the authors elucidated a physical mechanism creating an asymmetric momentum distribution function at the source-end of the channel and the influences of backscattering from the channel region. The authors also demonstrated that an electron injection velocity at a perfectly ballistic transport is independent of the channel length and corresponds well to a prediction from Natori's analytical model