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Large-Scale Applications of Real-Space Multigrid Methods to Surfaces, Nanotubes, and Quantum Transport
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2000
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Wide-bandgap SemiconductorEngineeringLarge-scale ApplicationsComputational MechanicsSemiconductor NanostructuresHexagonal Boron NitrideNanoelectronicsNumerical SimulationNanoscale ModelingConvergence AccelerationMulti-physics ModellingLow-dimensional SystemQuantum ScienceElectrical EngineeringPhysicsNanotechnologyMultiphysics ProblemDopant IncorporationCategoryiii-v SemiconductorQuantum TransportLow-dimensional StructureReal-space Multigrid MethodsNatural SciencesApplied PhysicsStress ReleaseMultiscale Modeling
The development and applications of real-space multigrid methods are discussed. Multigrid techniques provide preconditioning and convergence acceleration at all length scales, and therefore lead to particularly efficient algorithms. When using localization regions and optimized, non-orthogonal orbitals, calculations involving over 1000 atoms become practical on massively parallel computers. The applications discussed in this chapter include: (i) dopant incorporation and ordering effects during surface incorporation of boron, which lead to the formation of ordered domains at half-monolayer coverage; (ii) incorporation of Mg into GaN during growth, and in particular the conditions that would lead to maximum p-type doping; (iii) optical fingerprints of surface structures for use in real-time feedback control of growth; and (iv) mechanisms of stress release and quantum transport properties of carbon nanotubes.