Monolithic integration of In <sub>0.2</sub> Ga <sub>0.8</sub> Asvertical-cavity surface-emitting lasers with resonance-enhanced quantum well photodetectors

G.G. Ortiz, C.P. Hains, Jin Cheng, H.Q. Hou, J.C. Zolper

Electronics Letters · 1996 · 46 citations · 1 references

Concepts

Abstract

Vertical-cavity surface-emitting lasers (VCSELs) have been monolithically integrated with resonance-enhanced photo-detectors (REPDs) using a single epilayer design, to produce a simple array of sources and detectors for optical interconnect applications. The detectors, which contain a three quantum well InGaAs absorption region, achieve quantum efficiencies as high as 85%, and the VCSELs achieved threshold current densities as low as 850 A/cm2 and differential quantum efficiencies as high as 50%.

References

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