High-Temperature Growth of GaP on Si Substrates by Metalorganic Vapor Phase Epitaxy

Abstract

GaP was grown on misoriented Si substrates using metalorganic vapor phase epitaxy (MOVPE). At 700 and 800 °C, no mirror surface was obtained. A mirror surface was achieved at 830 °C with a high PH3 flow rate. The island nucleation density at the initial growth stage increased with temperature between 700 and 800 °C and saturated beyond 800 °C. Islands with a density of 1011 cm-2 nucleated at 830 °C. Cross-sectional transmission electron microscopy (c-TEM) shows that a 5-nm-thick GaP layer was formed by coalescence of the islands at 830 °C. A cross-hatched pattern (CHP) was observed for a 200-nm-thick GaP layer grown at 830 °C. The CHP indicates that the quality of the GaP layer was high. Cross-sectional TEM reveals that few stacking faults and dislocations exist in 5- and 40-nm-thick GaP layers on Si substrates.