Temperature Dependent Characteristics of Nonreach-Through 4H-SiC Separate Absorption and Multiplication APDs for UV Detection

Abstract

<para xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> Silicon carbide (SiC) separate absorption multiplication region avalanche photodiodes (SAM-APDs) for UV detection in harsh environment applications were designed and fabricated. The devices were intentionally designed to operate under nonreach-through conditions in order to eliminate field-induced leakage current. The gain of 2500 and quantum efficiency of <formula formulatype="inline"> <tex>$\sim$</tex></formula>45% at room temperature were achieved at the wavelength of 290–300 nm for a packaged device with an active area of <formula formulatype="inline"><tex>$1\times 1\ \hbox{mm}^{2}$</tex></formula>. The temperature dependency of the current-voltage characteristics and responsivity was examined in the temperature range from room temperature to 230<formula formulatype="inline"><tex>$~^{\circ}\hbox{C}$</tex></formula>. </para>