Experimental verification of large current capability of lateral IEGTs on SOI

Abstract

This paper reports, for the first time, the experimentally obtained electrical characteristics of lateral injection enhanced insulated gate bipolar transistors (LIEGTs) on SOI. It is shown that optimized LIEGTs have twice as large a current capability as LIGBTs and attain the same turn-off characteristics. These results show that LIEGTs are attractive for the output devices of high voltage power ICs.