Silicon Carbonitride (SiCN) Films by Remote Hydrogen Microwave Plasma CVD from Tris(dimethylamino)silane as Novel Single‐Source Precursor

Abstract

SiCN films were produced by remote microwave hydrogen plasma CVD (RP‐CVD) from tris(dimethylamino)silane precursor using different substrate temperature in the range T S =30‐400°C. The effect of T S on the rate of RP‐CVD, chemical structure, surface morphology, density, and photoluminescence (PL) of resulting films is reported. The increase in T S causes the formation of silicon carbonitride network, marked densification and smoothening of film surface, as well as shift of PL peak position.