IEEE Transactions on Electron Devices · 2005 · 46 citations · 4 references
EngineeringElectrical EngineeringElectronic MaterialsMicroelectronicsSemiconductor DevicesElectron Beam PhysicsHigh-frequency Power ConversionHigh-frequency Semiconductor DevicesBandwidthElectron AcceleratorsElectron Beam GenerationElectron Beam SourcesHigh-frequency ElectronicsVoltage
A new type of S-band multibeam klystron has been developed at the Institute of Electronics, Chinese Academy of Sciences, China. The main methods for obtaining wide bandwidth include a multibeam electron gun with 18 beams, a periodic permanent magnet focusing system, a wide-band bunching system and filter-load double-gap coupling-cavity output circuit. The design methods and experimental results are given in this paper. The test results show that this device has a peak power of 120-160 kW, a bandwidth of 10%, a gain of 41 dB, a beam voltage of 16 kV, a weight of 45 kg and a length of 700 mm.
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M.R. Boyd, R. Dehn, J.S. Hickey et al. · IRE Transactions on Electron Devices · 1962 · 48 citations