High-Power 25-Gb/s Electroabsorption Modulator Integrated With a Laser Diode

Abstract

A high-power 1.3-mu m electroabsorption modulator integrated laser diode was developed for 100 - Gb/s Ethernet applications. The average output power exceeding 6.5 dBm and clear eye opening with dynamic extinction ratio over 7.6 dB were realized at 35 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">deg</sup> C.