A consistently potential distribution oriented compact IGBT model

Abstract

With the trend to higher switching speed for IGBTs, the dynamics of the MOS part have increasing impact on device characteristics. In addition, the base-charge distribution of the BJT part has also to be modeled quite accurately to capture the IGBT's overall dynamic behavior adequately. We present a new IGBT model for circuit simulation, where all controlling potentials in the base region are calculated under fully dynamic load conditions, and which includes an advanced surface- potential-based charge-oriented MOSFET model. The approach assures that the dynamic interaction between MOS and BJT part is accurately taken into account. The model's abilities to describe the impact of the MOS-gate capacitance on the IGBT output characteristics, and to capture dynamic effects like overshoot under rapid switch- off conditions, are verified.