Write-erase and read paper memory transistor

Abstract

We report the architecture and the performances of a memory based on a single field-effect transistor built on paper able to write-erase and read. The device is composed of natural multilayer cellulose fibers that simultaneously act as structural support and gate dielectric; active and passive multicomponent amorphous oxides that work as the channel and gate electrode layers, respectively, complemented by the use of patterned metal layers as source/drain electrodes. The devices exhibit a large counterclockwise hysteresis associated with the memory effect, with a turn-on voltage shift between 1 and −14.5V, on/off ratio and saturation mobilities of about 104 and 40cm2V−1s−1, respectively, and estimated charge retention times above 14000h.