Proton damage effects in linear integrated circuits

Abstract

Proton tests of linear integrated circuits have identified devices where significantly more damage occurs at equivalent total dose levels with protons than with gamma rays. The difference is attributed to displacement damage, and it can be important for hardened devices as well as for unhardened technologies. Proton testing may be required for applications of circuits that use substrate and lateral pnp transistors in critical circuit functions where protons comprise a significant fraction of the space environment.