Catastrophic SEE in high-voltage power MOSFETs

Abstract

Heavy ion irradiation of high-voltage power MOSFETs with long-range ions (>123/spl mu/m in silicon) was performed using 14, 19, 22, 24, 28, and 39 MeV-cm/sup 2//mg ions at normal incidence. Prior to catastrophic failure some DUTs exhibited unusual electrical characteristic: all devices demonstrated high current transients (or current spikes) at voltages significantly lower than the voltage at which the devices failed.