Calculations on Deposition and Redeposition in Plasma Etch Processes

Abstract

Sidewall films can be formed during etching by redeposition of etch products and sputtered material from the bottom of the etched structure, by deposition of material sputtered from the mask edge, or by deposition of material from the plasma space. For each process the geometrical characteristics are calculated. A discussion of the spacial and temporal development of the sidewall films due to the three mechanisms is given.