Integrated a-Si:H Gate Driver With Low-Level Holding TFTs Biased Under Bipolar Pulses

Abstract

A hydrogenated amorphous silicon (a-Si:H) thin-film transistor (TFT) gate driver on array with low-level holding TFTs (LLH TFTs) biased under bipolar pulse is investigated. It is shown that the bipolar bias at low frequency significantly alleviates the threshold voltage shift of the LLH TFTs. As a result, the lifetime of the proposed gate driver is demonstrated to be several times of that under the conventional unipolar pulse bias. In addition, the improvement in the lifetime becomes more significant at the higher work temperature. The liquid crystal display television panels (32-in, 1366 × RGB × 768) with the proposed a-Si:H gate drivers integrated on array are manufactured, and the feasibility of the proposed driving scheme is well verified.