IEEE Transactions on Electron Devices · 2004 · 22 citations · 7 references
EngineeringComputer EngineeringElectrical EngineeringElectronic MaterialsMicroelectronicsSemiconductor DevicesCarrier TransportComplementary Metal-oxide-semiconductor TechnologyDevice ReliabilityMemory DevicesMetal-oxide-semiconductor Field-effect TransistorsSemiconductor ReliabilityCharge TrappingHot Carrier InjectionHot-carrier DegradationMemory Circuit DesignNon-volatile Memory DesignNonvolatile MemoryNonvolatile Memory DevicesSilicon Nitride
This work presents the characteristics of a two-bit-per-cell charge-trapping nonvolatile memory (NVM) device by using gate-to-drain nonoverlapped implanted (NOI) n-MOSFETs. Hot carriers are generated in NOI devices and injected into the silicon nitride spacers. The characteristics of this potential single-transistor NVM cell, including two-bit operation, programming and erasing characteristics, are investigated. Their stability and reliability characteristics such as retention, disturbance and cycling are also evaluated.
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NROM: A novel localized trapping, 2-bit nonvolatile memory cell
B. Eitan, Paolo Pavan, I. Bloom et al. · IEEE Electron Device Letters · 2000 · 547 citations · Full text
Engineering, Computer Engineering, Electrical Engineering +12