NVM Characteristics of Single-MOSFET Cells Using Nitride Spacers With Gate-to-Drain NOI

Abstract

This work presents the characteristics of a two-bit-per-cell charge-trapping nonvolatile memory (NVM) device by using gate-to-drain nonoverlapped implanted (NOI) n-MOSFETs. Hot carriers are generated in NOI devices and injected into the silicon nitride spacers. The characteristics of this potential single-transistor NVM cell, including two-bit operation, programming and erasing characteristics, are investigated. Their stability and reliability characteristics such as retention, disturbance and cycling are also evaluated.