2002 · 12 citations · 3 references
EngineeringElectrical EngineeringElectronic MaterialsMicroelectronicsSemiconductor DevicesDevice CharacterizationDevice ModelingDevice ScalingDevice SimulationIntegrated Circuit DesignShort-channel EffectsChannel EffectChannel EngineeringField-effect Transistor SimulationMetal-oxide-semiconductor Field-effect Transistor ModelingSuperposition PrincipleSuperposition Principle Analysis
For the first time, a theoretical model is presented, taking into account all the physical effects of T/sub OX/, X/sub j/, N/sub sub/, V/sub BS/, and channel engineering PTS scheme, to predict the Reverse-Short-Channel Effect (RSCE) in deep-submicron devices of several technology generations. The /spl Delta/V/sub th/ is found to follow the superposition principle. The worst case L/sub min/ is also modelled and its ultimate lower bound is exploited via optimum channel engineering.
3
A model for anomalous short-channel behavior in submicron MOSFETs
H.I. Hanafi, W. Noble, Roy S. Bass et al. · IEEE Electron Device Letters · 1993 · 45 citations