Reverse short-channel effects and channel-engineering in deep-submicron MOSFETs: modeling and optimization

Abstract

For the first time, a theoretical model is presented, taking into account all the physical effects of T/sub OX/, X/sub j/, N/sub sub/, V/sub BS/, and channel engineering PTS scheme, to predict the Reverse-Short-Channel Effect (RSCE) in deep-submicron devices of several technology generations. The /spl Delta/V/sub th/ is found to follow the superposition principle. The worst case L/sub min/ is also modelled and its ultimate lower bound is exploited via optimum channel engineering.