Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 2007 · 18 citations · 1 references
EngineeringElectrical EngineeringOptoelectronicsPhotonicsSemiconductor DevicesHigh-frequency Semiconductor DevicesLaser DiodesLaser OpticsLight-emitting DiodesSemiconductor LasersCavity DesignLaser LinewidthLasersLinewidth BroadeningLinewidth NarrowingPower OutputSemiconductor Laser DiodesSensor Applications
High power single mode InGaAsP/InP DFB laser diodes with narrow linewidth and emitting near 1310nm are key devices for Analog transmission and Sensor applications since they can be rugged and compact sources more suited to harsh environment than solid-state or fiber-based lasers. Typically, the useful output power of DFB sources is limited to about 100mW when sub-MHz linewidth is required Ref [1] by the so-called "re-broadening effect" which causes the spectral linewidth to increase due to spatial-hole burning and other effects. We report here sub-MHz linewidth at output power levels exceeding 500mW resulting from cavity design that successfully addresses the concerns of linewidth re-broadening. Single-frequency operation can be maintained from threshold to the high power operating point without mode hops.
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