A wideband 90º continuous phase shifter for 60GHz phased array transceiver in 90nm CMOS technology

Abstract

This paper presents a wideband reflective-type phase-shifter in 90nm CMOS technology. The proposed phase shifter, employs a broadside coupler in the multi-layer metal structure in CMOS technology to attain 3-dB coupling at coupled and through ports where the phase difference between these two ports is 90º. The reflective load contains a NMOS CMOS varactor with a tuning ratio of 3. Applying a 0–1 V DC tuning voltage, the overall phase shifter provides 0–87º continuous phase shift, where the insertion loss of the phase shifter alters between 4.5–8 dB at the frequency range of 50–65 GHz and occupies chip area of 0.3×0.25mm2. The overall phase shift achieved by this design can be extended to 180 and 360 degree.