Concepedia

A 4″ wafer photostepper-based carbon nanotube FET technology for RF applications

M. Schröter, P. Kolev, D. Wang, M. Eron, Stanley Lin, Nandasiri Samarakone, Michael J. Bronikowski, Zhen Yu, P. Sampat, P. Syams,

2011 IEEE MTT-S International Microwave Symposium · 2011 · 20 citations · 8 references

DOI

Concepts

Abstract

Depletion-mode CNTFETs have been fabricated on 4" wafers with a photostepper-based process. The transistors show significant current and power gain with peak (f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</sub> , f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">max</sub> ) values of (9, 10) GHz. Compact model results are compared to experimental characteristics over bias and frequency. First RF amplifier circuit results are also shown.

References

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L. Nougaret, H. Happy, G. Dambrine et al. · Applied Physics Letters · 2009 · 181 citations · Full text

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