A 4″ wafer photostepper-based carbon nanotube FET technology for RF applications

Abstract

Depletion-mode CNTFETs have been fabricated on 4" wafers with a photostepper-based process. The transistors show significant current and power gain with peak (f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</sub> , f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">max</sub> ) values of (9, 10) GHz. Compact model results are compared to experimental characteristics over bias and frequency. First RF amplifier circuit results are also shown.