An accurate package model for 60W GaN power transistors

Abstract

This paper reports on a straightforward yet highly accurate approach to determine a package model for microwave power transistors. The model is based on a lumped-element equivalent circuit for the package, into which compact models for the active transistor cells are embedded. A packaged 60W GaN-HEMT in FBH technology is used as an example. The device is designed to operate at 2 GHz. The basis of package analysis and modeling is a full 3D emsimulation. From these results, an equivalent circuit is derived and component values are determined analytically. The extraction methodology is not limited to a certain transistor technology or dedicated type of package. The model is verified by measurements and shows very good accuracy up to the third harmonic of the target frequency, i.e., 6GHz.